◎電機所專題英文演講(5月21日)-演講者：郭正邦教授(國立臺灣大學電機系教授)◎

主講人：郭正邦教授(國立臺灣大學電機系教授)
講題：Analysis of STI-Induced Mechanical Stress Effects on The Kink Effects of 40nm PD SOI NMOS Devices
時間：5月21日(星期四)下午13:30
地點：人文大樓11樓會議室
摘要：
SOI technology has become a mainstream CMOS technology in the nanometer regime. This talk reports the shallow trench isolation (STI)-induced mechanical stress-related kink effect behavior of the 40 nm PD SOI NMOS device. As verified by the experimentally measured data, the kink effect behavior in the saturation region occurs at a higher drain for the 40 nm PD device with a smaller S/D length of 0.17 um as compared to the one with the SA of 1.7 um due to the higher body-source bandgap narrowing (BGN) effect on the parasitic bipolar device from the higher STI-induced mechanical stress, offset by the impact ionization enhanced by the BGN in the high electric field region near the drain.

歡迎有興趣的同學踴躍參與!

電機工程研究所敬邀